Samsung to Produce 50nm NAND Flash Memory in 1Q, 2007
January 12, 2007
Samsung has recently started sampling 16-gigabyte NAND flash memory chips based on 50-nanometer process technology. Featuring a MLC (Multi-Level Cell) design and 4-kilobyte page size, Samsung's new memory chip is able to write twice as fast as traditional MLC chips and read 1.5 times as fast as its predecessor. Full-scale production is slated for the first quarter of 2007.
Meanwhile, in a bid to outpace Samsung, Toshiba is set to introduce NAND flash memory based on 56-nanometer process technology. Toshiba plans to start volume production of such chips at its Yokkaichi plant in Mie Prefecture starting from January 2007. Further specifications have not yet been furnished.